Archive for December, 2007

IHM/IHV B Power Modules for Traction Drives

Friday, December 14th, 2007

Infineon Technologies AG have introduced the first Insulated Gate Bipolar Transistor modules of its IHM/IHV B series. The new device enables efficient power inverter designs for use in harsh environments with high load and temperature cycling requirements, such as in traction drives for locomotives, trains and tramways. The product has improved thermal behavior, an expanded operating temperature of up to +150°C and a high load cycling capability.

The new modules provide up to 50 percent more power with the same inverter size, its thermal performance enables inverter designs to feature up to 50 percent higher output current. The maximum operating temperature of the new modules is +150°C, up from +125°C for previous modules. Another benefit is the possibility of the mechanical compatibility with the previous IHM-A family.

The IHM/IHV B modules have been equipped with Aluminium Silicon Carbide (ALSiC) base plates. In combination with isolation ceramics, the use of the AlSiC base plates improved the thermal cycling capability by a factor of 10.

The new modules meet the fire protection requirements. They cover the voltage ranges of 1,200 V, 1,700 V and 3,300 V, and manage currents above 3,600 A.

µCool Portfolio of Power MOSFETs for Portable Applications

Tuesday, December 11th, 2007

It’s a device by ON Semoconductor in reply for smaller, thinner, faster, cooler running and more reliable MOSFET devices.

The µCool™ products feature exceptional thermal resistance (38° C/W) and power ratings (1.9 W) in an impressively small 42 mm footprint.

The devices:

- The 20 V P-Channel Single NTLJS3113PT1G and the dual NTLJD3115PT1G are both optimized for lithium-ion battery charging applications with RDS(on) at 4.5 V of 42 mohms and 100 mohms respectively.
- The 20 V P-Channel FETKy© NTLJF3117PT1G (100mohms) is optimized to convert the 3 V to 4 V battery voltage into 1.1 V to power the microprocessor.
- The 30 V N-Channel Single NTLJS4159NT1G (35 mohms) and FETKy NTLJF4156NT1G (70 mohms) are both optimized for synchronous boost applications such as white LED backlight voltage.
- The 30 V N-Channel dual NTLJD4116NT1G (70 mohms) is optimized for low side switching such as camera strobe and flash.

ON Semiconductor’s latest MOSFETs offer yet another feaaaaature: an exposed flag on the bottom surface that acts as a drain contact and heat dissipation path. It allows for either greater power handling or operation at a lower junction temperature. This is important in battery operated devices as it extends the life time of the battery by lowering junction temperature equates to lower RDS(on) or less power loss.

Digital Power Controllers from Silicon Laboratories

Friday, December 7th, 2007

They come in four applications:

DC/DC converters
AC/DC converters
PFC circuits
DC motor control

They are two packages: 5 x 5 mm 28QFN and 32LQFP.

 Single-Chip, Flash Digital Controller:
Supports isolated and non-isolated applications
Supports AC/DC, DC/DC and PFC applications
Enables new system capabilities

Dedicated DSP-Based Loop Processor:
Fixed 10 MHz update rate
Differential input ADC
Loop filter DSP engine 
Hardware pulse-by-pulse current limiting with programmable leading edge blanking
Programmable hardware over-current protection

50 MIPS Flash System Management Processor:
Up to 16, 32 K of Flash
Flash can be used as EEPROM
On-board 2% oscillator
Self-sequencing, 8-channel 12-bit ADC
High-speed, programmable general-purpose comparator
SMBus hardware interface
Enhanced UART for isolated control data link
Four 16-bit timers
3-Channel PCA for timing or additional PWM outputs
High-current, fully-programmable I/O port lines

Comprehensive, Low-Cost Development Kit:
Minimizes learning curve and speeds time-to-market
Real-time firmware kernel greatly reduces firmware development
Intuitive compensator design tool
GUI-based waveform designer/simulator
System configuration wizards
Intuitive IDE with real-time debug

1,500V Power MOSFETs, STx4N150: Beyond the 1,000V frontline

Tuesday, December 4th, 2007

The 1,500V Power MOSFET by ST is based on the well consolidated High Voltage Mesh Overlay technology. These devices are available in standard TO-220 and TO-247 packages and in the fully isolated plastic TO-220FH package.

Features:
- Typical RDS(on) = 5 Ohm
- Avalanche ruggedness
- Gate charge minimized
- Very low intrinsic capacitances
- High speed switching