Roberts Warr Electronics News & Resources

Low Profile, 35A power connectors are only 7.5 mm high which allows a better efficiency in the power system designs. Other features are: deliver high current, low contact resistance and minimal insertion force. Also High current density is possible thanks to high-performance LowR contacts. Better airflow efficiency is achieved by low profile design. A selection of contact length and sizes, and termination styles is available.

The devices are available in right angle-to-right angle, right angle-to-straight, and straight-to-straight pin and socket combinations.

International Rectifier has introduced the 30V synchronous buck HEXFET© MOSFETs for DC-DC synchronous point-of-load converters - the IRF7835PbF and IRF7836PbF. The new devices can be used where small size, high efficiency and better thermal conduction are required.

The new devices have improved critical light-load efficiency in battery-operated systems by 1.5%.

The IRF7835PbF can be used in applications up to 11A per MOSFET. The IRF7836PbF can be used in applications up to 9A per MOSFET.

A new addition of GTO (gate turn-off) thyristors has been introduced by IXYS Corporation. The device is encapsulated in a 47mm pole face hermetic pressure contact package and has a nominal current rating of 1000A.

The new device is suitable for a 1.5kV DC link voltage and offers 80% reverse blocking voltage capability. There are four blocking voltage ratings available: S1000NC300 (rated at 3000V forward and reverse blocking voltage), S1000NC30Y (rated at 3000V forward and 100V reverse blocking), S1000NC36D (rated at 3600V forward blocking voltage and 3000V reverse blocking) and S1000NC36Y (rated at 3600V forward blocking and 100V reverse blocking).

The first Insulated Gate Bipolar Transistor (IGBT) modules of its IHM/IHV B series has been introduced by Infineon Technologies AG. The modules are very efficient in harsh conditions, such as in traction drives for locomotives, trains and tramways. The IGBT a high load cycling capability and operating temperature of up to +150 degrees C.

The design is based on the new high-power modules and provides about 50% more power. Also output is 50% higher. The storage temperature has been lowered up to -55 degrees.

The device is very reliable in demanding conditions. To meet the needs the IHM/IHV has been equipped with Aluminium Silicon Carbide (ALSiC) base plates. It improved the thermal cycling capability.

A new family of power - MOSFETS µCool™ has been introdued by ON Semiconductor. The device features good performance and design. flexibility.

“We have designed the µCool™ portfolio to exclusively address the unique power management challenges in portable devices such as lithium-ion battery charging circuits, high and low side load switches, and synchronous buck and boost circuits,” said Thibault Kassir, ON Semiconductor’s director. “These first µCool™ devices are just the beginning of what we expect will be an extensive portfolio utilizing our latest trench technology. Operating voltages will range from 8 V to 30 V and a variety of configurations will be offered - including single, dual, FETKy, complementary and integrated load switch.”

AT90PWMx AVR© by Atmel has been designed for lamp ballast and motor control applications. Both the 8-Kbyte Flash AT90PWM3 and AT90PWM2  allow high flexibility in controlling light levels, energy savings and easy to maintain. The 4-Kbyte Flash AT90PWM1 is cost effective.

The AT83EB5114 is available in a low-pin-count SO20 package and supports a 4-Kbyte ROM and a 256-byte EEPROM.

To reduce EMI by generating current in phase with the supplied voltage, the device requires a Power Factor Correction (PFC). In order to  manage the PFC functionality and control the lamp power, the microcontrollers have dedicated peripherals.

New modules for active PFC have been introduced by Tyco Electronics / Power Systems. The devices applications are: flowPFC0 >6kW (230V~ / 400Vdc, f=100kHz, Th=80°C):

P802-D30,40 / P803D-30,40 - CoolMOS+Tandem FRED

P800-D30,40 - CoolMOS+SiC-Diode

P804-D30 - Highspeed IGBT+Tandem FRED

The PFC Modules feature good performance PFC-boost circuit, dual boost circuits for paralleled or alternating switching mode, temperature sensor and low inductive design with integrated DC-capacitor.

The device’s applications are measurement applications do to the low HF-ripple on the output voltage. The SWR220 is switched on and off by an external 24V signal. It’s also got an internal fan that transports the heat out of the unit. The voltage - ether 115Vac or 230Vac - can be chosen on the bach panel of the unit. The dimension of the SWR220 is 92 x 190 x 341mm.