New IHM/IHV B Power Modules
The first Insulated Gate Bipolar Transistor (IGBT) modules of its IHM/IHV B series has been introduced by Infineon Technologies AG. The modules are very efficient in harsh conditions, such as in traction drives for locomotives, trains and tramways. The IGBT a high load cycling capability and operating temperature of up to +150 degrees C.
The design is based on the new high-power modules and provides about 50% more power. Also output is 50% higher. The storage temperature has been lowered up to -55 degrees.
The device is very reliable in demanding conditions. To meet the needs the IHM/IHV has been equipped with Aluminium Silicon Carbide (ALSiC) base plates. It improved the thermal cycling capability.
This entry was posted on Thursday, June 19th, 2008 at 9:59 am and is filed under Industry News. You can follow any responses to this entry through the RSS 2.0 feed. You can leave a response, or trackback from your own site.