Roberts Warr Electronics News & Resources

Advanced Power Technology RF, a leading supplier of silicon power transistors for radio frequency and microwave applications, has introduced a series of P-Band Higher Power, High Gain, Medium Pulse Transistors. The new devices have new design, offer state-of-the-art performance and provide high power and high gain.

Three model types are available: 0910-60M, 0910-150M and 0910-300M. They are designed to handle medium pulse widths of 150us with a duty cycle of 5% minimum. Other features are: P-Band Radar Application, Good Output Power of 300W, Superb Droop Performance of 0.5 dB, Collector Efficiency of 50% and Hermetic Metal Package.

The 500V and 1000V Depletion-Mode Power MOSFETs have been introduced by IXYS Corporation. They can be used in current control for current sources and current regulators and biasing off the high voltage DC line in power systems.

Active loads, level shifting, solid-state relays and start-up circuits are some of the applications of the devices. They can act as active inductors with high dynamic impedance in power filter applications to limit voltage and current noise and spikes. The MOSFETs are ideal for reducing power dissipation.

The PX3539, the latest VR11 digital multi-phase power controller, has been introduced by  Primarion. It can be used in power regulation in server and desktop PC applications.
The device gives more flexibility, performance, discrete and integrated power stages, as well as low cost. It can be used to build DC-DC converters that provide up to 130A with great efficiency, low ripple and the lowest component count.

Other features of the PX3538 include:  support for Intel VR10.x and VR11 VID codes, AMD 5-bit and 6-bit VID codes and custom microprocessors, internal high-precision voltage reference, precision digital current sense calibration, digital temperature sensor compensation, digitally programmable loadline and loop compensation, differential voltage sense and others.

The device s a two-, three-, or four-phase buck controller. It combines differential voltage and current sensing and adaptive voltage positioning to power Intel’s most demanding Pentium IV Processors and low voltage, high current power supplies.

The NCP5381 features high performance operational error amplifier, dynamic reference injection, remote temperature sensing per VR11, 2,3, or 4-phase operation, lossless differential inductor current sensing, adaptive voltage positioning, frequency range: 100kHz-1.0MHz , operates from 12V and has a programmable soft-start time.

The device can be used in pentium IV processors, VRM modules and graphics card.

The IR1167 SmartRectifier IC has been introduced by International Rectifier. The device is for use in mini PCs, game systems, digital computing and home entertainment systems and AC-DC power converters for laptops.

“In 100W to 300W flyback circuits, traditional complex and bulky current transformer control circuits waste energy because large reversing currents are required to sense polarity shifts through the SR MOSFETs. In contrast, IR’s new SmartRectifier IC employs a new technique for precise, direct sensing of voltage thresholds across the SR MOSFETs, allowing fast, accurate control to minimize power losses,” said Stephen Oliver from International Rectifier.
The device is compatible with all MOSFET gate types and offers direct connection to IR”s.

The HV7800, a new high side, current sensing IC has been introduced by ­ Supertex.

 The device has the operating range of 8V-450V DC. The IC operates by sensing the voltage across an external resistor and transmitting this reading to the ground-referenced circuit at a gain of one with a typical accuracy of +/-1%. It also provides a much easier sensing implementation.

“The wide input voltage range of the HV7800 allows it to be used to monitor current in telecom and base station applications, power management applications, and LCD TVs with LED backlight applications in which the HV7800 is recommended for use in conjunction with our recently introduced LED driver IC, the HV9911,” states Ahmed Masood, from Marketing for Supertex. “The IC solves many current sense design problems–high voltage, high precision, fast response time and space considerations.”

The 1,500V Power MOSFET based on the well consolidated High Voltage Mesh Overlay technology has been introduced by ST. The layout is stronger and coupled with new proprietary edge termination structure. It gives RDS per area in this voltage range, unrivalled gate charge and switching characteristics.

The devices are available in TO-220 and TO-247 packages, or in the fully isolated plastic TO-220FH package. The devices feature low intrinsic capacitances, avalanche ruggedness, minimized gate charge and High speed switching.

 They can be used in 480V T5 ballast PFC, Three phase auxiliary SMPS and HV piezoelectric driver class B amplifierions.