STx4N150
The 1,500V Power MOSFET based on the well consolidated High Voltage Mesh Overlay technology has been introduced by ST. The layout is stronger and coupled with new proprietary edge termination structure. It gives RDS per area in this voltage range, unrivalled gate charge and switching characteristics.
The devices are available in TO-220 and TO-247 packages, or in the fully isolated plastic TO-220FH package. The devices feature low intrinsic capacitances, avalanche ruggedness, minimized gate charge and High speed switching.
They can be used in 480V T5 ballast PFC, Three phase auxiliary SMPS and HV piezoelectric driver class B amplifierions.
This entry was posted on Thursday, July 3rd, 2008 at 9:57 am and is filed under Industry News. You can follow any responses to this entry through the RSS 2.0 feed. You can leave a response, or trackback from your own site.