High Gain, Medium Pulse Transistors
Advanced Power Technology RF, a leading supplier of silicon power transistors for radio frequency and microwave applications, has introduced a series of P-Band Higher Power, High Gain, Medium Pulse Transistors. The new devices have new design, offer state-of-the-art performance and provide high power and high gain.
Three model types are available: 0910-60M, 0910-150M and 0910-300M. They are designed to handle medium pulse widths of 150us with a duty cycle of 5% minimum. Other features are: P-Band Radar Application, Good Output Power of 300W, Superb Droop Performance of 0.5 dB, Collector Efficiency of 50% and Hermetic Metal Package.
This entry was posted on Thursday, July 31st, 2008 at 10:30 am and is filed under Industry News. You can follow any responses to this entry through the RSS 2.0 feed. You can leave a response, or trackback from your own site.