Emitter-Switched Bipolar Transistors
Hybrid Emitter-Switched Bipolar Transistors have been introduced by STMicroelectronics. The new devices offer low forward voltage drop, the new ESBT series represents a breakthrough in the area of high voltage, high switching frequency applications, high blocking voltage and fast switching speed.
The new ESBT has also high voltage capability of up to 1.7kV. This allows designs to operate with a higher flyback voltage and a higher duty cycle.
The new family products include the STC03DE170, STC05DE150 and the STC08DE150. All these products have a Vcs(sat) value of 0.9V, minimising conduction losses, while the absence of tail currents also minimises turn-off losses.
This entry was posted on Monday, August 11th, 2008 at 9:59 am and is filed under Industry News. You can follow any responses to this entry through the RSS 2.0 feed. You can leave a response, or trackback from your own site.